发明名称 Method of manufacturing nano-gap electrode
摘要 A method of easily manufacturing a nano-gap electrode by using a focused ion beam lithography includes a layer depositing step of depositing an electrode layer and a metal mask layer in this order on an insulating substrate, a mask pattern forming step of etching the metal mask layer by using the focused ion beam and thereby forming a mask pattern, a dry etching step of transferring a pattern to the electrode layer by dry etching, and a wet etching step of removing the metal mask layer by using a solution that selectively dissolves the metal mask layer compared to the electrode layer.
申请公布号 US7056446(B2) 申请公布日期 2006.06.06
申请号 US20030662886 申请日期 2003.09.16
申请人 COMMUNICATIONS RESEARCH LABORATORY, INDEPENDENT ADMINISTRATIVE INSTITUTION 发明人 NAGASE TAKASHI;KUBOTA TOHRU;MASHIKO SHINRO
分类号 B44C1/22;B81B1/00;B82B1/00;G01N27/07;H01J37/305;H01J37/317;H01L21/027;H01L21/033;H01L21/3213;H01L21/768 主分类号 B44C1/22
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