发明名称 |
Method of manufacturing nano-gap electrode |
摘要 |
A method of easily manufacturing a nano-gap electrode by using a focused ion beam lithography includes a layer depositing step of depositing an electrode layer and a metal mask layer in this order on an insulating substrate, a mask pattern forming step of etching the metal mask layer by using the focused ion beam and thereby forming a mask pattern, a dry etching step of transferring a pattern to the electrode layer by dry etching, and a wet etching step of removing the metal mask layer by using a solution that selectively dissolves the metal mask layer compared to the electrode layer.
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申请公布号 |
US7056446(B2) |
申请公布日期 |
2006.06.06 |
申请号 |
US20030662886 |
申请日期 |
2003.09.16 |
申请人 |
COMMUNICATIONS RESEARCH LABORATORY, INDEPENDENT ADMINISTRATIVE INSTITUTION |
发明人 |
NAGASE TAKASHI;KUBOTA TOHRU;MASHIKO SHINRO |
分类号 |
B44C1/22;B81B1/00;B82B1/00;G01N27/07;H01J37/305;H01J37/317;H01L21/027;H01L21/033;H01L21/3213;H01L21/768 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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