发明名称 Methods of forming oxide masks with submicron openings and microstructures formed thereby
摘要 Processing techniques are disclosed for batch fabrication of microstructures comprising an oxide mask on a substrate with submicron openings formed therein, and microstructures having deep-submicron, high aspect-ratio etched trenches, using conventional optical photolithography. Exemplary high aspect-ratio etched-trench microstructures that may be produced include single crystal resonators and sensors.
申请公布号 US7056757(B2) 申请公布日期 2006.06.06
申请号 US20040996683 申请日期 2004.11.22
申请人 GEORGIA TECH RESEARCH CORPORATION 发明人 AYAZI FARROKH;ABDOLVAND REZA;ANARAKI SIAVASH P.
分类号 H01L21/00;H01L21/76 主分类号 H01L21/00
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