Method of manufacturing semiconductor device

摘要

A method of manufacturing a semiconductor device. The method comprises steps of providing a substrate having a first metal layer and a second metal layer formed thereon. A first dielectric layer, an etching stop layer having a first opening located above the first metal layer and a second opening located above the second metal layer and a second dielectric layer are formed sequentially. A portion of the first dielectric layer and a portion of the second dielectric layer are removed to form a first trench exposing the first metal layer. A capacitor dielectric layer is formed over the substrate. A third opening is formed in the capacitor dielectric layer. A portion of the second dielectric layer and a portion of the first dielectric layer exposed by the third opening are removed to form an opening. A metal layer is formed to fill out the first trench and the opening.