发明名称 Sense amplifier select circuit and method of selecting the same
摘要 The present invention relates to a sense amplifier select circuit for use in a memory device consisting of cell arrays and sense amplifier arrays arranged in a shared sense amplifier mode. The sense amplifier select circuit includes a first controller for outputting a sense amplifier select signal in response to a block select signal and an operation control signal of a sense amplifier, and a second controller connected to the first controller to control the sense amplifier select signal, wherein the second controller applies an enable/disable signal when selection of a cell array is changed and keeps the enable/disable state when a sense amplifier to be sensed within a selected cell array is changed. As such, a corresponding cell array is continuously connected/disconnected to/from a bit line sense amplifier. As a result, it is possible to significantly reduce consumption of current occurring due to toggle of a sense amplifier select signal.
申请公布号 US7057954(B2) 申请公布日期 2006.06.06
申请号 US20030738651 申请日期 2003.12.17
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM SUNG RYONG
分类号 G11C7/00;G11C11/4091;G11C7/06;G11C7/08 主分类号 G11C7/00
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