| 发明名称 |
Semiconductor structures having through-holes sealed with feed-through metalization |
| 摘要 |
Semiconductor structures with one or more through-holes are disclosed. A feed-through metallization process may be used to seal the through-holes hermetically.
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| 申请公布号 |
US7057274(B2) |
申请公布日期 |
2006.06.06 |
| 申请号 |
US20040894989 |
申请日期 |
2004.07.20 |
| 申请人 |
HYMITE A/S |
发明人 |
HESCHEL MATTHIAS |
| 分类号 |
G02B6/122;H01L23/04;G02B6/42;H01L21/44;H01L21/768;H01L23/02;H01L23/38;H01L23/48;H01L23/52;H01L31/0203 |
主分类号 |
G02B6/122 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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