发明名称 Precharge control circuit of pseudo SRAM
摘要 A precharge control circuit of a pseudo SRAM including a precharge set signal generation unit configured to output a precharge set signal, a precharge standby signal generation unit configured to output a precharge standby signal, a precharge signal output unit configured to output a precharge signal in response to the precharge set signal and the precharge standby signal, a first precharge control unit configured to forcedly control the output signal of the precharge standby signal generation unit such that the precharge signal is generated in a period where a chip select signal is disabled, in the case where the chip select signal is disabled long for a first time, and a second precharge control unit configured to forcedly control the output signal of the precharge standby signal generation unit such that the precharge signal is generated in a period where the chip select signal is disabled, in the case where the chip select signal is disabled long for a second time longer than the first time, wherein the precharge signal is generated in response to the operation of the first precharge control unit or the second precharge control unit.
申请公布号 US7057952(B1) 申请公布日期 2006.06.06
申请号 US20050908566 申请日期 2005.05.17
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE YIN JAE;KWON TAE WOO
分类号 G11C7/00 主分类号 G11C7/00
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