发明名称 Magnetic memories with bit lines and digit lines that intersect at oblique angles and fabrication methods thereof
摘要 A magnetic memory includes digit lines, bit lines, and magnetic tunnel junctions (MTJs) that are between the bits lines and the digit lines. The digit lines intersect the bit lines at an oblique angle. The digit lines may intersect the bit lines at an oblique angle of from 15° to 75°.
申请公布号 US7057222(B2) 申请公布日期 2006.06.06
申请号 US20030687134 申请日期 2003.10.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG WON-CHEOL
分类号 G11C11/15;H01L29/76;G11C11/16;H01L21/8246;H01L27/22;H01L29/94 主分类号 G11C11/15
代理机构 代理人
主权项
地址