发明名称 |
STRESS REDUCTION OF SIOC LOW K FILMS |
摘要 |
A method for depositing a low dielectric constant film includes providing a gas mixture including one or more cyclic organosiloxanes and one or more inert gases to a substrate in a chamber. In one aspect, the gas mixture further includes one or more oxidizing gases. The ratio of a total flow rate of the one or more cyclic organosiloxanes into the chamber to a total flow rate of the one or more inert gases into the chamber is from about 0.10 to about 0.20. Preferably, the low dielectric constant film has compressive stress.
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申请公布号 |
KR20060059913(A) |
申请公布日期 |
2006.06.02 |
申请号 |
KR20057025091 |
申请日期 |
2005.12.27 |
申请人 |
APPLIED MATERIALS INC. |
发明人 |
SCHMITT FRANCIMAR C.;M'SAAD HICHEM |
分类号 |
H01L21/312;C23C16/40;C23C16/509;H01L21/316 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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