CIRCUIT FOR GENERATING RESET SIGNAL IN SEMICONDUCTOR MEMORY DEVICE,申请号KR20040098667-传众专利搜索

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发明名称	CIRCUIT FOR GENERATING RESET SIGNAL IN SEMICONDUCTOR MEMORY DEVICE
摘要
申请公布号	KR20060059544(A)	申请公布日期	2006.06.02
申请号	KR20040098667	申请日期	2004.11.29
申请人	HYNIX SEMICONDUCTOR INC.	发明人	NA, KWANG JIN
分类号	G11C7/20;G11C7/10	主分类号	G11C7/20
代理机构		代理人
主权项
地址

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