| 摘要 |
The support (1) consists of a rectangular substrate (5) of graphite with front (6) and rear (7) faces, and at least one front face stack comprising a layer of monocrystalline diamond (8a), a layer of an electrically insulating oxide (9a) and a semiconducting layer (2a). A second stack of the same materials (8b, 9b, 2b) and an optional layer of a polymer material can be applied to the rear face of the substrate. The oxide layer contains at least one of the following: Al2O3, BaSrTiO3. HfO2 and rare earth oxides. The support is also fitted with electrical (3) and thermal (11) connections.
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