| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of controlling substrate temperature, while treating the substrate with a semiconductor substrate treatment apparatus, and to provide its apparatus. SOLUTION: A pedestal assembly 116 is equipped with an electrostatic chuck jointed with a metallic base 114. The electrostatic chuck 126 is provided with at least one chuck electrode 186, while the metallic base 114 is provided with at least two conduit loops that are fluid-separated. The pedestal assembly 116 has a channel 108 formed between the base 114 and a support member. Heat transmission between the support member and the base is further controlled, by supplying coolant gas in the nearby area of a material layer. As a result, the temperature profile on the substrate arranged on the support member can be controlled. COPYRIGHT: (C)2006,JPO&NCIPI |
