发明名称 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To improve smear characteristics, while maintaining proper adhesion. SOLUTION: The solid-state imaging device comprises a photodiode, and a charge transfer for transferring a charge signal from the photodiode. A light-shielding film 13, that covers the charge transfer and a light-shielding film, that covers a base adhesion layer are both composed of a refractory metal or its silicide, wherein an opening is provided in the photodiode. Since a refractory metal or its silicide that constitutes the base adhesion layer is formed by means of sputtering method, the light-shielding films are formed via the base adhesion layer 12 which is composed of a titanium nitride layer or a titanium layer. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006140529(A) 申请公布日期 2006.06.01
申请号 JP20060009371 申请日期 2006.01.18
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SENDA HIROYUKI
分类号 H01L27/148;H01L27/14;H04N5/335;H04N5/359;H04N5/369;H04N5/372 主分类号 H01L27/148
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