SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR, WIRING BOARD AND PRODUCTION METHOD THEREFOR, SEMICONDUCTOR PACKAGE AND ELECTRONIC APPARATUS

摘要

A terminal pad is formed on the active surface of an LSI chip, and composite barrier metal layer is provided on this terminal pad. A plurality of low-elasticity-modulus particles consisting of silicone resin are dispersed into a metal parent phase consisting of NiP in the composite barrier metal layer. The film thickness of the composite barrier layer is, for example, 3 µm, and the diameter of the low-elasticity-modulus particles is, for example, 1µm. With the composite barrier metal layer connected with a solder bump, a semiconductor device is mounted on a wiring board. Accordingly, since low-elasticity-modulus particles are deformed according to an applied stress when the semiconductor device is connected with the wiring board via the solder bump, the stress can be absorbed.