发明名称 MASKS WITH SUBMICRON OPENINGS FOR MICROSTRUCTURES
摘要 <p>Processing techniques are disclosed for batch fabrication of microstructures comprising an oxide mask on a substrate with submicron openings formed therein, and microstructures having deep-submicron, high aspect-ratio etched trenches, using conventional optical photolithography. Exemplary high aspect-ratio etched-trench microstructures that may be produced include single crystal resonators and sensors.</p>
申请公布号 WO2006057644(A1) 申请公布日期 2006.06.01
申请号 WO2004US39811 申请日期 2004.11.23
申请人 GEORGIA TECH RESEARCH CORPORATION 发明人
分类号 (IPC1-7):H01L21/00;H01L21/20 主分类号 (IPC1-7):H01L21/00
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