METHOD FOR FORMING A GATE OXIDE LAYER IN NON-VOLATILE MEMORY DEVICE AND METHOD FOR FORMING A GATE PATTERN INCLUDING THE SAME,申请号KR20040097771-传众专利搜索

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发明名称	METHOD FOR FORMING A GATE OXIDE LAYER IN NON-VOLATILE MEMORY DEVICE AND METHOD FOR FORMING A GATE PATTERN INCLUDING THE SAME
摘要
申请公布号	KR20060058813(A)	申请公布日期	2006.06.01
申请号	KR20040097771	申请日期	2004.11.26
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	KIM, JUNG HWAN;LEAM, HUN HYEOUNG;LEE, JAI DONG
分类号	H01L21/8247	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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