| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device further excellent in productivity by preventing the progress of separation until arriving at a seal ring. SOLUTION: The semiconductor device is formed with low dielectric constant films 5a-5c with copper wiring 19 formed therein, oxide silica films 6, 7a arranged on the upper side of the low dielectric constant film 5c, surface protective films 43 arranged on the upper side of the oxide silica films 6, 7a, a seal ring 23 formed so as to surround the periphery of a circuit forming region, and a groove 22 formed outside the seal ring 23 when it is seen in a plan. The groove 22 is formed so that the bottom thereof is positioned at a side upper than the low dielectric constant film 5c and that the bottom becomes lower than the upper end of the copper wiring 19. COPYRIGHT: (C)2006,JPO&NCIPI |
