发明名称 SEMICONDUCTOR MICROFABRICATED STRUCTURE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a microfabricated structure which has a reduced crystalline defect level and has superior semiconductor characteristics. SOLUTION: The method of manufacturing the microfabricated structure formed of a single crystal semiconductor comprises a process (a) wherein first catalyst fine particles 130 containing a first dopant element to be grown as a first conductivity type for the single crystal semiconductor are formed on a support body 101; and a process (b) wherein a material gas containing an element constituting the single crystal semiconductor is introduced near the surface of the support body, the material gas is decomposed by the first catalyst fine particles, and then a single crystal semiconductor containing the first dopant element is so grown as to form a first microfabricated object 111. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006140293(A) 申请公布日期 2006.06.01
申请号 JP20040328059 申请日期 2004.11.11
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SAITO TORU;KAWASHIMA TAKAHIRO;TAKAGI TAKESHI
分类号 H01L21/205;H01L21/20;H01L21/336;H01L29/06;H01L29/786 主分类号 H01L21/205
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