发明名称 |
Phase change memory cell with transparent conducting oxide for electrode contact layer |
摘要 |
The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.
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申请公布号 |
US2006113573(A1) |
申请公布日期 |
2006.06.01 |
申请号 |
US20050290712 |
申请日期 |
2005.11.29 |
申请人 |
CHEONG BYUNG-KI;JEONG JEUNG-HYUN;KANG DAO-HWAN;LEE TAEK SUNG;KIM IN HO;LEE KYEONG SEOK;KIM WON MOK;AHN DONG-HO;KIM KI-BURN |
发明人 |
CHEONG BYUNG-KI;JEONG JEUNG-HYUN;KANG DAO-HWAN;LEE TAEK SUNG;KIM IN HO;LEE KYEONG SEOK;KIM WON MOK;AHN DONG-HO;KIM KI-BURN |
分类号 |
H01L29/768 |
主分类号 |
H01L29/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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