发明名称 |
High-voltage transistor device having an interlayer dielectric etch stop layer for preventing leakage and improving breakdown voltage |
摘要 |
A high-voltage transistor device with an interlayer dielectric (ILD) etch stop layer for use in a subsequent contact hole process is provided. The etch stop layer is a high-resistivity film having a resistivity greater than 10 ohm-cm, thus leakage is prevented and breakdown voltage is improved when driving a high voltage greater than 5V at the gate site. A method for fabricating the high-voltage device is compatible with current low-voltage device processes and middle-voltage device processes.
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申请公布号 |
US2006113627(A1) |
申请公布日期 |
2006.06.01 |
申请号 |
US20040999508 |
申请日期 |
2004.11.29 |
申请人 |
CHEN CHUNG-I;KUAN HSIN;CHEN ZHI-CHENG;YEH RANN-SHYAN;CHANG CHI-HSUEN;LIU JUN X;SUNG TZU-CHIANG;LIU CHIA-WEI;CHANG JIEH-TING |
发明人 |
CHEN CHUNG-I;KUAN HSIN;CHEN ZHI-CHENG;YEH RANN-SHYAN;CHANG CHI-HSUEN;LIU JUN X.;SUNG TZU-CHIANG;LIU CHIA-WEI;CHANG JIEH-TING |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
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