METHOD OF MANUFACTURING SILICON THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon thin film capable of suppressing concentration of impurity low, while forming a silicon thin film at a low temperature.

SOLUTION: A method of manufacturing a silicon thin film comprises the steps of arranging a substrate 1 in a chamber 10, and forming a silicon thin film on the substrate 1 by performing ion beam deposition under a condition of 250°C or less temperature. Preferably, a basic atmospheric pressure in the chamber 10 in which the ion beam deposition is performed is adjusted to 10-12Torr or more and 10-7Torr or less.

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