| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a charged particle beam exposure device, especially a multiple electron beam type exposure device, in which the thermal load of an aperture array under irradiation of electron beam is reduced for improved precision in lithography. <P>SOLUTION: An aperture array 4 splits the electron beam from an electron source 1 by a plurality of apertures, and allows a wafer 8 to be exposed to a plurality of (multiple) electron beam through a reduction projecting system 7 including various lenses. A pre-aperture array 3 is disposed on the front stage of the aperture array 4, and comprises an opening for containing the aperture of aperture array 4 to limit the amount of irradiation of electron beam projected to the aperture array 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
