| 摘要 |
PROBLEM TO BE SOLVED: To prevent boosting capability from being restricted by the voltage independency of a capacity of an MOS capacitor even in the case of carrying out the switching of a high frequency by improving the frequency response of the MOS capacitor in a semiconductor apparatus for a charge pump obtained by forming a capacitor for the charge pump by the MOS capacitor. SOLUTION: As the MOS capacitors for the charge pump, a plurality of first electrodes are formed in one channel region of the substrate, and insulating layers and a plurality of second electrodes are formed above the plurality of first electrodes. A resistance value of the MOS capacitors is reduced by the plurality of first and second electrodes to reduce voltage dependencies of the MOS capacitors to improve its frequency response. COPYRIGHT: (C)2006,JPO&NCIPI
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