| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS semiconductor device which can deal with a process of making the diameter of a wafer large and with a process of making a design rule fine, and which is isolated from a semiconductor substrate. SOLUTION: The MOS semiconductor device comprises a first conductive epitaxial layer 3 selectively deposited and formed on a first conductive semiconductor substrate 1, a second conductive embedded diffusion layer 2 selectively formed between the semiconductor substrate 1 and the first conductive epitaxial layer 3, a second conductive well layer 4 diffused and formed so as to reach the embedded diffusion layer 2 from the surface of the epitaxial layer 3, a first conductive well layer 5 diffused and formed in the second conductive well layer 4, a second conductive source layer 6 and a second conductive drain layer 7 diffused and formed in the first conductive well layer 5, and a gate electrode 9 formed between the source layer 6 and the drain layer 7 via a gate insulating film 8. COPYRIGHT: (C)2006,JPO&NCIPI
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