| 摘要 |
PROBLEM TO BE SOLVED: To provide a trench-gate type semiconductor device having a trench contact structure in which ions injected into the bottom of a contacting trench do not give large influences to the on-voltage of the device even if the ions are diffused in the lateral direction, and to provide a method of manufacturing the device. SOLUTION: After an oxidized film 15 is formed on the internal wall of the contacting trench 14, part of the bottom of the trench 14 is exposed by anisotropically etching the oxidized film 15, and the ions are injected into the bottom of the trench 14 by using the oxidized film 15 as a mask. COPYRIGHT: (C)2006,JPO&NCIPI
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