| 摘要 |
PROBLEM TO BE SOLVED: To provide a switched connection film where a large switched connection magnetic field is generated at an interface of an antiferromagnetic layer formed of IrMn, and a ferromagnetic layer (fixed magnetic layer) and the magnetization of the ferromagnetic layer can firmly be fixed, and to provide a magnetic detection element. SOLUTION: In the switched connection film, the magnetization of the ferromagnetic layer is fixed in one direction by the switched connection magnetic field generated at the interface of the laminated and formed ferromagnetic layer and the antiferromagnetic layer. The antiferromagnetic layer is formed of Ir<SB>z</SB>Mn<SB>100-z</SB>((z) is 2 at%≤z≤80 at% in at%). The ferromagnetic layer is formed in the two-layered structure of a Co<SB>y</SB>Fe<SB>100-y</SB>layer ((y) is 80 at%≤y≤100 at% in at%) of a face-centered cubic structure which is brought into contact with the antiferromagnetic layer and of a Fe<SB>x</SB>Co<SB>100-x</SB>layer ((x) is x≥30 at% in at%) laminated on the Co<SB>y</SB>Fe<SB>100-y</SB>layer. The thickness of the Fe<SB>x</SB>Co<SB>100-x</SB>layer is set to be 30% to 90% of the thickness of the whole ferromagnetic layer. COPYRIGHT: (C)2006,JPO&NCIPI
|
