| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of inexpensively manufacturing a semiconductor integrated circuit equipped with a high-withstand voltage MOS transistor having a high operating withstand voltage at any time when either a high gate voltage or a low gate voltage is applied. SOLUTION: When the high-withstand voltage MOS transistor is manufactured where a high-concentration drain region is formed apart from a gate end in a deep grade region, a gate insulating film is removed from a part located outside of a gate electrode formation predetermined region for the formation of an opening, impurities are injected into the opening with energy so as not to penetrate through the gate insulating film, and thus a shallow grade region is formed. COPYRIGHT: (C)2006,JPO&NCIPI
|
