| 摘要 |
<p>An etching method wherein an article to be treated, which has an undercoat layer being composed of a silicon-containing material and, formed thereon, a layer to be etched being composed of a tungsten-containing material, is subjected to an etching treatment in a treating chamber capable of being evacuated to vacuum in the presence of a plasma, characterized in that a chlorine-containing gas, an oxygen-containing gas and a nitrogen-containing gas are used as an etching gas.</p> |
