BEAM MICROELECTRONIC ELEMENT

摘要

The invention relates to technical physics, I.e. electronics and can be used for producing microassamblies such as high-accuracy low-nose transistors, UHF-transistors, microcircuits, microdiodes, microthyristors and other semiconductor elements for microprocessor engineering, power circuits, automatic process control systems and REA. The inventive beam microelectronic element comprises a multilayer structure provided with spacer films for components like collector-base-emitter or source-gate-drain. Said electronic components are made from identical constituent layers which form mutual arrangement combinations. The number of layers N>1, wherein N is an integer number. The constituent layers are embodied in the form of oxide isolations, for example copper oxide. The thickness of said multilayer structure is less than 80 mkm. The aim of said invention is to develop high-accuracy microassemblies, for example, transistors exhibiting stable electrical parameter values and output characteristics at electrical overloads and an extended temperature exposure range. The invention makes it possible to improve structure of materials and to increase electrical and mechanical characteristics thereof, thereby reducing the noise level of instruments made from said stacks. The combination into a multilayer stack enables to improve required physical characteristics of any thin single-element materials from the effect of superhigh increase of physical characteristics to the dispersion reduction.