| 摘要 |
PROBLEM TO BE SOLVED: To mount a thyristor chip for overheat protection adaptive to reduction of chip size in a semiconductor device containing MOSFET. SOLUTION: A semiconductor device 1 comprises an MOSFET consisting of a gate electrode G and a source electrode S on one main surface 1a. A thyristor chip 2 which operates for conductivity at a specified temperature or higher is arranged on the source electrode S. In the MOSFET, a p-type diffusion layer 12 is formed on one surface (main surface 1a) of an n-type semiconductor substrate 11 while an n-type diffusion layer 13 is formed inside it. The source electrode S is connected to the diffusion layer 13, and the gate electrode G is made to face its extension part to a channel, with a drain electrode D formed on the other surface of semiconductor substrate 11. The anode electrode A of the thyristor chip 2 is connected to the gate electrode G, and a first cathode electrode K1 is directly and electrically connected to the source electrode S. A second cathode electrode K2 is connected inside the thyristor chip 2 to the first cathode electrode K1. COPYRIGHT: (C)2006,JPO&NCIPI |
