| 摘要 |
The leakage current generated due to the extension of the depleted layer to the end of the chip is reduced. In MOSFET 100 , the depths of the trenches 112 in the gate pad portion 50 and the circumference portion 70 are larger than the depths of the trenches 111 in the cell region 60 . Therefore, the depleted layer extending from the cell region 60 along the direction toward the gate pad portion 50 or the direction toward the circumference portion 70 is blocked by the presence of the trench 112 . In other words, an extending of the depleted layer can be terminated by disposing the trench 112 , so as to avoid reaching the depleted layer to the end of the semiconductor chip. Accordingly, a leakage current generated from the cell region 60 along the direction toward the end of the semiconductor chip can be reduced.
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