Making contact holes in semiconductor body with insulated electrodes in trenches, employs thermal oxidation, planarization and remaining insulation layer as contact hole mask

摘要

Second insulation layer (10) is produced, covering at least part of the surface (7, 8, 9) of the structure. This is achieved by subjecting the surface of the structure to a thermal oxidation process. A planarization process is then carried out, in such a way that the semiconductor body (1) is laid bare in the region of the mesa zones (3). The contact holes (12) are formed in the mesa zones, using the second insulation layer remaining after the planarization process as a contact hole mask. An independent claim is included for the corresponding structure.