NITRIDE SINGLE CRYSTAL SEEDED GROWTH IN SUPERCRITICAL AMMONIA WITH ALKALI METAL ION
摘要
<p>The present invention is related to a process for obtaining a larger area substrate of mono-crystalline gallium-containing nitride by making selective crystallization of gallium containing nitride on a smaller seed under a crystallization temperature and/or pressure from a supercritical ammonia-containing solution made by dissolution of gallium-containing feedstock in a supercritical ammonia-containing solvent with alkali metal ions, comprising: providing two or more elementary seeds, and making selective crystallization on the two or more separate elementary seeds to get a merged larger compound seed. The merged larger compound seed is used for a seed in a new growth process and then to get a larger substrate of mono-crystal gallium-containing nitride.</p>
申请公布号
WO2006057463(A1)
申请公布日期
2006.06.01
申请号
WO2005JP22396
申请日期
2005.11.28
申请人
AMMONO SP. Z O.O.;NICHIA CORPORATION;DWILINSKI, ROBERT;DORADZINSKI, ROMAN;GARCZYNSKI, JERZY;SIERZPUTOWSKI, LESZEK;KANBARA, YASUO