发明名称 Designated MOSFET and driver design to achieve lowest parasitics in discrete circuits
摘要 Apparatus are described for a pair of MOSFET power transistors, a MOSFET driver, and an idealized circuit layout utilized in a power stage such as that of a power conversion system. The power stage comprises a pair of MOSFET transistors having substantially identical electrical characteristics and complementary package configurations for simplifying and optimizing the layout of the power stage on a single side or layer of a printed circuit board. The ideal layout effectively avoids parasitic circuit components, minimizes layout area and costs, and permits operation at higher switching frequencies. A new MOSFET transistor pin configuration is also described that is essentially a functional mirror or functional complement of an existing MOSFET transistor pin configuration to provide the complementary package configurations and the optimized PCB layout. A customized MOSFET driver pin configuration further optimizes the power stage layout by arranging the pins of the driver to coordinate with those of the MOSFET transistor pair.
申请公布号 US2006113657(A1) 申请公布日期 2006.06.01
申请号 US20040998471 申请日期 2004.11.29
申请人 INFINEON TECHNOLOGIES NORTH AMERICA CORP. 发明人 EJURY JENS
分类号 H01L23/52 主分类号 H01L23/52
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