发明名称 PACKAGE USING SELECTIVELY ANODIZED METAL AND MANUFACTURING METHOD THEREOF
摘要 A package using selectively anodized metal and a manufacturing method thereof are provided. The method includes a patterning step, an anodized metal film forming step, a via hole forming step, and a bump forming step. The pattering step is performed by attaching a masking material to a surface of a metal substrate for integrating semiconductor elements and patterning regions that will not be anodized. The anodized metal film forming step is performed by selectively anodizing the patterned metal substrate and forming a metal oxidation layer having a predetermined thickness. The via hole forming step is performed by forming the via holes in the metal oxidation layer. The bump forming step is performed by forming the bumps for surface-mounting.
申请公布号 WO2006057480(A1) 申请公布日期 2006.06.01
申请号 WO2005KR00195 申请日期 2005.01.24
申请人 WAVENICS, INC.;KWON, YOUNG-SE;SHIN, SEONG-HO 发明人 KWON, YOUNG-SE;SHIN, SEONG-HO
分类号 H01L23/28 主分类号 H01L23/28
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