Non-volatile semiconductor memory, has wells disposed in substrate, and set of non-volatile memory cells arranged in set of sectors, and set of switching units connecting respective wells to word line potential

摘要

The memory has a substrate (1) with a substrate region, and electrically insulating units disposed in the substrate. Wells (2) of a doping type is disposed in the substrate, and a set of non-volatile memory cells is arranged in a set of sectors. A word line electrically connects memory cells of a group of sectors. A set of switching units connect the respective wells to a word line potential. An independent claim is also included for a method for operating a non-volatile semiconductor memory.