| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dielectric thin film having high dielectric constant, small leakage current, and stable physical characteristics and electrical characteristics; to provide a thin-film dielectric device such as a thin-film capacitor having high capacitance and high reliability, and to provide its manufacturing method. <P>SOLUTION: This dielectric thin film contains an oxide such as barium strontium titanate, expressed by composition Formula (Ba<SB>x</SB>Sr<SB>(1-x)</SB>)<SB>a</SB>TiO<SB>3</SB>(0.5<x≤1.0 and 0.96<a≤1.00) and having a thickness of not larger than 500 nm. This manufacturing method of the thin-film dielectric device includes a process of annealing the dielectric thin film, in an atmosphere of an oxidizing gas, after forming the dielectric thin film on a conductive electrode. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
