METHOD OF MODIFYING SURFACE AREA AND ELECTRONIC DEVICE
摘要
<p>In the method a first layer, particularly of amorphous silicon, is deposited on the surface of a substrate with trenches. Part of this surface is covered with a protective layer. The first layer is thereafter maskless removed with a dry etching treatment on the substrate surface while it is kept within the trench.</p>
申请公布号
WO2006056959(A1)
申请公布日期
2006.06.01
申请号
WO2005IB53905
申请日期
2005.11.25
申请人
KONINKLIJKE PHILIPS ELECTRONICS N.V.;KEMMEREN, ANTONIUS, L., A., M.;ROOZEBOOM, FREDDY;KLOOTWIJK, JOHAN, H.;WOLTERS, ROBERTUS, A., M.
发明人
KEMMEREN, ANTONIUS, L., A., M.;ROOZEBOOM, FREDDY;KLOOTWIJK, JOHAN, H.;WOLTERS, ROBERTUS, A., M.
