发明名称 |
Methods of fabricating trench type capacitors including protective layers for electrodes and capacitors so formed |
摘要 |
A method of forming a capacitor can include forming a protective layer on a metal layer in a trench in an insulating layer and outside thereof. A surface of the protective layer and the metal layer beneath can be planarized using a chemical mechanical polishing (CMP) process to expose a surface of the insulating layer outside the trench. Related structures are also disclosed.
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申请公布号 |
US2006115950(A1) |
申请公布日期 |
2006.06.01 |
申请号 |
US20050284678 |
申请日期 |
2005.11.22 |
申请人 |
KIM KWANG-BOK;KO YONG-SUN;KIM KYUNG-HYUN |
发明人 |
KIM KWANG-BOK;KO YONG-SUN;KIM KYUNG-HYUN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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