发明名称 Methods of fabricating trench type capacitors including protective layers for electrodes and capacitors so formed
摘要 A method of forming a capacitor can include forming a protective layer on a metal layer in a trench in an insulating layer and outside thereof. A surface of the protective layer and the metal layer beneath can be planarized using a chemical mechanical polishing (CMP) process to expose a surface of the insulating layer outside the trench. Related structures are also disclosed.
申请公布号 US2006115950(A1) 申请公布日期 2006.06.01
申请号 US20050284678 申请日期 2005.11.22
申请人 KIM KWANG-BOK;KO YONG-SUN;KIM KYUNG-HYUN 发明人 KIM KWANG-BOK;KO YONG-SUN;KIM KYUNG-HYUN
分类号 H01L21/20 主分类号 H01L21/20
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