发明名称 |
Semiconductor memory device having a decoupling capacitor |
摘要 |
A semiconductor memory device comprises a cell capacitor having a first buried contact connected with a semiconductor substrate of a cell region and a first storage node connected with the first buried contact, and a decoupling capacitor for reducing a coupling noise, having a plurality of second buried contacts formed on a semiconductor substrate portion adjacent in the cell region and extended in parallel with each other and a plurality of second storage nodes connected with the second buried contacts.
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申请公布号 |
US2006113633(A1) |
申请公布日期 |
2006.06.01 |
申请号 |
US20050154922 |
申请日期 |
2005.06.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JE-MIN;HWANG YOO-SANG |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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