| 摘要 |
The present invention provides a method for patterning a metal gate electrode and a method for manufacturing an integrated circuit including the same. The method for patterning the metal gate electrode, among other steps, includes forming a metal gate electrode layer ( 220 ) over a gate dielectric layer ( 210 ) located on a substrate ( 110 ), and patterning the gate electrode layer ( 220 ) using a combination of a dry etch process ( 410 ) and a wet etch process ( 510 ).
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