发明名称 |
High performance CMOS devices and methods for making same |
摘要 |
An integrated circuit having high performance CMOS devices with good short channel effects may be made by forming a gate structure over a substrate; forming pocket implant regions and source/drain extensions in the substrate; forming spacers along sides of the gate structure; and thermal annealing the substrate when forming the spacers, the thermal annealing performed at an ultra-low temperature. An integrated circuit having high performance CMOS devices with low parasitic junction capacitance may be made by forming a gate structure over a substrate; forming pocket implant regions and source/drain extensions in the substrate; forming spacers along sides of the gate structure; performing a low dosage source/drain implant; and performing a high dosage source/drain implant.
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申请公布号 |
US2006113591(A1) |
申请公布日期 |
2006.06.01 |
申请号 |
US20040999724 |
申请日期 |
2004.11.30 |
申请人 |
WAN CHIH-HAO;WANG TA-WEI;HU CHENMING |
发明人 |
WAN CHIH-HAO;WANG TA-WEI;HU CHENMING |
分类号 |
H01L21/336;H01L29/94 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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