| 摘要 |
There is provided a method of manufacturing a semiconductor device, the method including: forming a gamma-aluminum oxide layer on a semiconductor substrate; forming a semiconductor layer on the gamma-aluminum oxide layer; forming an exposed portion for exposing a part of the gamma-aluminum oxide layer through the semiconductor layer; forming a support which is formed of a material having an etching rate smaller than that of the gamma-aluminum oxide layer and which supports the semiconductor layer on the semiconductor substrate; forming a cavity, which the gamma-aluminum oxide layer is removed from, between the semiconductor substrate and the semiconductor layer by selectively etching the gamma-aluminum oxide layer through the exposed portion; forming a buried insulating layer in the cavity by thermally oxidizing the semiconductor substrate and the semiconductor layer inside the cavity through the exposed portion; forming a gate electrode on the semiconductor layer with a gate insulating layer therebetween; and forming source/drain layers, which are disposed on both sides of the gate electrode, in the semiconductor layer.
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