INTEGRATED BST MICROWAVE TUNABLE DEVICES USING BUFFER LAYER TRANSFER METHOD
摘要
A BST microwave device includes a single crystal oxide wafer. A silicon dioxide layer is formed on the single crystal oxide layer. A silicon substrate is bonded on the silicon dioxide layer. A BST layer is formed on the single crystal oxide layer.
申请公布号
WO2006034120(A3)
申请公布日期
2006.06.01
申请号
WO2005US33339
申请日期
2005.09.19
申请人
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;KIM, II-DOO;TULLER, HARRY, L.