| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of forming a low-defect germanium film on an insulator or a silicon substrate. <P>SOLUTION: The method comprises a process of preparing a silicon wafer, a process of forming a germanium film by using a two-step CVD process, a process of annealing the germanium thin film by using a multiple-cycle process, a process of implanting hydrogen ions, a process of depositing and smoothing a layer of tetraethoxysilane oxide (TEOS), a process of preparing a counter wafer, a process of bonding the germanium thin film to the counter wafer to form a bonded structure, a process of annealing the bonded structure at a temperature of at least 375°C to facilitate splitting of the bonded wafer, a process of splitting the bonded structure to expose the germanium thin film, a process of removing any remaining silicon along with any defect zone of the germanium thin film from the surface of the germanium thin film, and a process of incorporating the low-defect germanium thin film into a desired end-product device. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
