| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin-film transistor that prevents surface damage of an organic semiconductor layer and reduces the OFF-state current. SOLUTION: An OTFT (organic thin film transistor) comprises a substrate 110; source/drain electrodes 12/125 formed on the substrate 110; a semiconductor layer 130 formed on the substrate 110, and including the source/drain electrodes 12/125 and a channel layer 135 formed between them; a gate insulating film 140 formed on the semiconductor layer 130; an isolation pattern 145, formed in the semiconductor layer 130 and the gate insulating film 140, to isolate the channel layer 135; and a gate electrode 155 formed on the gate insulating film 140 on the upper part of the channel layer 135. COPYRIGHT: (C)2006,JPO&NCIPI
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