WIRING/ELECTRODE AND SPUTTERING TARGET

摘要

Wiring/electrode being low in resistivity and suitable for higher density of an electronic device, especially for making larger and finer a flat display element such as a liquid crystal display, and a sputtering target being high in discharge stability and used for the production thereof. Wiring/electrode is formed by an Al-based alloy thin film containing in Al less than 0.5 at.% in total of at least one kind of metal selected from a group III in the periodic table and containing up to 100ppm of oxygen. Accordingly, wiring/electrode is obtained which has electric resistivity as low as that of a pure Al thin film produced under the same conditions and is high in hillock resistance. Wiring/electrode further lower in resistivity and higher in hillock resistance is obtained by improving the orientation of (111) plane oriented in parallel to a substrate surface. Such wiring/electrode is obtained by forming a thin film by a sputtering method that uses a sputtering target consisting of Al-based alloy containing less than 0.5 at.% in total of at least one kind of metal selected from a group III in the periodic table and containing up to 100ppm of oxygen, and then heat-treating it at temperatures of at least 150<SUP>?</SUP>C.