| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure inside a device that effectively scatters light and thereby to improve light extraction efficiency without complicating a light-emitting device manufacturing process. <P>SOLUTION: In the device structure of a GaN-based light emitting device, a light scattering layer 50 is provided as a layer other than a light emitting layer 30 in a laminated layer that contains an n-type layer 20, the light emitting layer 30, and a p-type layer 40. Light emitted from the light emitting layer is configured to be scattered by an uneven interface between a first GaN based crystal 51 and an embedding layer 52 that constitute the light scattering layer 50. The light scattering layer 50 is structured such that the first GaN-based crystal 51 having a refractive index of n1 is vapor-deposited in a form having projections and/or recesses on a surfactant-processed base surface 50B, and the crystal 51 is embedded by a second GaN-based crystal (refractive index n2 (≠n1)) 52. The level difference between the projections and depressions of the surface of the crystal 51 is set to be a quarter or more of a wavelength of light in the light layer 50 that is emitted from the light emitting layer 30. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
