| 摘要 |
PROBLEM TO BE SOLVED: To provide a BTL amplifier that is improved in both high degree of integration and high output by reducing the wiring resistance by limiting the installed extent of wiring in the mounting area of an output transistor. SOLUTION: Four transistors (10-13) divide an output transistor region (100) in a grid-shaped state. Between the first and third transistors (10 and 12) adjoining to each other in the lateral direction, semiconductor regions (102, 104, and 106) are arranged in the lateral direction and, between the first and second transistors (10 and 11) and the third and fourth transistors (12 and 13) adjoining to each other in the longitudinal direction, the directions of the semiconductor regions (102, 104, and 106) orthogonally cross each other. The first and third transistors (10 and 12) are connected to a power supply terminal (1) through first wiring (51), and the second and fourth transistors (11 and 13) are connected to a grounding terminal (2) through second wiring (52). In addition, the first and second transistors (10 and 11) are connected to a first output terminal (3) through third wiring (53), and the third and fourth transistors (12 and 13) are connected to a second output terminal (4) through fourth wiring (54). COPYRIGHT: (C)2006,JPO&NCIPI
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