发明名称 |
Control of threshold voltage in organic field effect transistors |
摘要 |
A field effect transistor (FET) includes a substrate, and a gate layer formed on the substrate. An oxygen plasmarized polymeric gate dielectric is formed on the gate layer so as to increase the threshold voltage of the OFET. A semiconductor layer is formed on the oxygen plasmarized polymeric gate dielectric.
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申请公布号 |
US2006113569(A1) |
申请公布日期 |
2006.06.01 |
申请号 |
US20050266070 |
申请日期 |
2005.11.03 |
申请人 |
AKINWANDE AKINTUNDE I;BULOVIC VLADIMIR;KYMISSIS IOANNIS;WANG ANNIE I |
发明人 |
AKINWANDE AKINTUNDE I.;BULOVIC VLADIMIR;KYMISSIS IOANNIS;WANG ANNIE I. |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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