SYSTEM AND METHOD FOR PROTECTING SEMICONDUCTOR DEVICES

摘要

A semiconductor memory device (200) includes a group of word lines (710) and a structure (810, 820, 830) that is configured to dissipate current from the group of word lines (710) during fabrication of the semiconductor memory device (200). Inadvertent charging may be prevented by connecting the word lines to a thin oxide capacitor by means of polysilicon resistors. Polysilicon resistors can be designed to have a high resistance to cause an appropriately low leakage. The desired resistance level may be achieved by adjusting the silicided and non-silicided portions of the resistors.